題 目：Three generations of IC technologies from Silicon, GaAs, to high power GaN microelectronics
内容簡介：Over the past 70 years, semiconductor IC technologies have developed very rapidly, starting with single crystal silicon (G1), later with compound semiconductor (CS) GaAs (G2), to latest wide-bandgap GaN (G3) technologies. All become our major part of economic, scientific and engineering activities worldwide.
This seminar reviews historical perspective from simple transistors, invented by Shockley, Bardeen and Brattain, to complex integrated circuits, which have grown exponentially in complexity, performance, and applications. The goal is to help understand from basic silicon BJT and MOSFET technologies to applications, IC fabrication process such as lithography, wafer-level characterizations and reliability. GaAs and GaN technologies in MESFET and PHEMT will be briefly introduced to compare with Silicon properties.
報告人：太阳集团app首页 高峰 教授
報告人簡介：研究方向為模拟集成電路設計、射頻功率器件的測量與表征、集成電路芯片質量和可靠性的測量與評估。1992年博士畢業于美國佛羅裡達大學，1992-1995年任密西根大學安娜堡分校和伊利諾伊大學博士後研究員。1995-2018年擔任美國高科技公司（Skyworks Solutions、MACOM Technology等）的高級總工程師和高級工程經理，從事半導體器件和IC芯片的技術研發，編寫美國專利，撰寫或合著60多篇國際期刊或會議論文。2019年1月到現在擔任太阳集团app首页講座教授，2020年入選廣東省“銀齡專家”。
時 間：2021年8月20日（周五） 上午 10：00開始
地 點：騰訊會議 會議ID：833 966 655
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太阳集团1088vip